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DMS2120LFWB
P-CHANNEL ENHANCEMENT MODE MOSFET WITH INTEGRATED SBR
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Features
* Low On-Resistance * 95m @VGS = -4.5V * 120m @VGS = -2.5V * 150m (typ) @VGS = -1.8V Low Gate Threshold Voltage, -1.3V Max Fast Switching Speed Low Input/Output Leakage Incorporates Low VF Super Barrier Rectifier (SBR) Low Profile, 0.5mm Max Height Lead Free/RoHS Compliant (Note 2) "Green" Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
* * * * * * * * Case: DFN3020B-8 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020D Terminal Connections: See Diagram Terminals: Finish - NiPdAu annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Marking Information: See Page 5 Ordering Information: See Page 5 Weight: 0.011 grams (approximate)
NEW PRODUCT
* * * * * * * *
DFN3020B-8
G
S
K
K K D D
D A
A A S G
Top View
Bottom View
Equivalent Circuit
Bottom View Pin Configuration
Maximum Ratings - TOTAL DEVICE
Characteristic Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range
@TA = 25C unless otherwise specified Symbol PD RJA TJ, TSTG Value 1.5 85 -55 to +150 Unit W C/W C
Maximum Ratings - P-CHANNEL MOSFET - Q1
Characteristic Drain-Source Voltage Gate-Source Voltage Drain Current (Note 1) Pulsed Drain Current (Note 4)
@TA = 25C unless otherwise specified Symbol VDSS VGSS ID IDM Value -20 12 -2.9 -10 Units V V A A
Maximum Ratings - SBR - D1
Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage
@TA = 25C unless otherwise specified Symbol VRRM VRWM VR VR(RMS) IO IFSM Value 40 28 1 3 Unit V V A A
RMS Reverse Voltage Average Rectified Output Current Non-Repetitive Peak Forward Surge Current 8.3ms single half sine-wave superimposed on rated load
Notes: 1. 2. 3. 4.
Device mounted on FR-4 PCB, on minimum recommended, 2oz Copper pad layout. No purposefully added lead. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. Repetitive rating, pulse width limited by junction temperature.
SBR is a registered trademark of Diodes Incorporated. DMS2120LFWB
Document number: DS31667 Rev. 4 - 2
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(c) Diodes Incorporated
DMS2120LFWB Electrical Characteristics - P-CHANNEL MOSFET - Q1
Characteristic OFF CHARACTERISTICS (Note 5) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Symbol BVDSS IDSS IGSS VGS(th) RDS (ON) |Yfs| VSD Ciss Coss Crss Min -20 -0.45
@TA = 25C unless otherwise specified Typ 70 84 100 8 0.42 632 65 54 Max -1 100 800 -1.3 95 120 150 -1.2 Unit V A nA V m S V pF pF pF Test Condition VGS = 0V, ID = -250A VDS = -20V, VGS = 0V VGS = 8V, VDS = 0V VGS = 12V, VDS = 0V VDS = VGS, ID = -250A VGS = -4.5V, ID = -2.8A VGS = -2.5V, ID = -2.0A VGS = -1.8V, ID = -1.0A VDS = -5V, ID = -2.8A VGS = 0V, IS = -1.0A VDS = -10V, VGS = 0V f = 1.0MHz
NEW PRODUCT
Gate-Source Leakage ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transfer Admittance Diode Forward Voltage (Note 5) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance
Electrical Characteristics - SBR - D1
Characteristic Reverse Breakdown Voltage (Note 5) Forward Voltage Reverse Current (Note 5)
Notes:
@ TA = 25C unless otherwise specified Symbol V(BR)R VF IR Min 40
Typ
Max 0.42 0.49 30
Unit V V A
Test Condition IR = 1mA IF = 0.5A IF = 1.0A VR = 20V
5. Short duration pulse test used to minimize self-heating effect.
Q1, P-CHANNEL MOSFET
10
VGS = -8.0V VGS = -4.5V
10
VDS = -5V
-ID, DRAIN CURRENT (A)
VGS = -2.0V
6
-ID, DRAIN CURRENT (A)
8
VGS = -2.5V
8
6
4
VGS = -1.5V
4
TA = 150C
2
VGS = -1.0V VGS = -1.2V
2
TA = 125C
TA = 85C TA = 25C TA = -55C
0 0
1 2 3 4 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristics
5
0 0.5
1 1.5 -VGS, GATE SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristics
2
SBR is a registered trademark of Diodes Incorporated. DMS2120LFWB
Document number: DS31667 Rev. 4 - 2
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April 2009
(c) Diodes Incorporated
DMS2120LFWB Q1, P-CHANNEL MOSFET - Continued
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()
0.14 0.12 0.1 0.08 0.06 0.04 0.02 0 0 1 2 3 4 5 6 7 -ID, DRAIN CURRENT (A) Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage 8
0.14 0.12 0.1
TA = 125C
TA = 150C
NEW PRODUCT
VGS = -1.8V VGS = -2.5V VGS = -4.5V
0.08 0.06 0.04 0.02 0 0 2 3 4 5 6 7 -ID, DRAIN CURRENT (A) Fig. 4 Typical Drain-Source On-Resistance vs. Drain Current and Temperature 1 8
TA = 85C TA = 25C TA = -55C
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()
1.6 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED)
0.11
1.4
VGS = -2.5V ID = -2A
0.09
VGS = -2.5V ID = -2A
1.2
VGS = -4.5V ID = -5A
0.07
VGS = -4.5V ID = -5A
1.0
0.8
0.05
0.6 -50
-25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Fig. 5 On-Resistance Variation with Temperature
0.03 -50
-25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Fig. 6 On-Resistance Variation with Temperature
10,000 -VGS(TH), GATE THRESHOLD VOLTAGE (V)
f = 1MHz
1 0.9 0.8 0.7 0.6 0.5
ID = -250A ID = -1mA
C, CAPACITANCE (pF)
1,000
Ciss
100
Coss Crss
0.4 0.3 0.2 -50
10 0 8 12 16 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 7 Typical Capacitance 4 20
-25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (C) Fig. 8 Gate Threshold Variation vs. Ambient Temperature
SBR is a registered trademark of Diodes Incorporated. DMS2120LFWB
Document number: DS31667 Rev. 4 - 2
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April 2009
(c) Diodes Incorporated
DMS2120LFWB
Q1, P-CHANNEL MOSFET - Continued
10
NEW PRODUCT
-IS, SOURCE CURRENT (A)
8
6
TA = 25C
4
2
0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 -VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 9 Diode Forward Voltage vs. Current
D1, SBR
IF, INSTANTANEOUS FORWARD CURRENT (A)
0.7 0.6 PD, POWER DISSIPATION (W) 0.5 0.4 0.3 0.2 0.1 0 0 0.5 1 1.5 IF(AV), AVERAGE FORWARD CURRENT (A) Fig. 10 Forward Power Dissipation
1
TA = 150C
0.1
TA = 125C
0.01
TA = 85C
TA = 25C
0.001
TA = -55C
0.0001 0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 11 Typical Forward Characteristics
SBR is a registered trademark of Diodes Incorporated. DMS2120LFWB
Document number: DS31667 Rev. 4 - 2
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April 2009
(c) Diodes Incorporated
DMS2120LFWB D1, SBR - Continued
10,000 IR, INSTANTANEOUS REVERSE CURRENT(uA) 1,000
TA = 150C T A = 125C
10,000
1,000 C, CAPACITANCE (pF)
f = 1MHz
100
TA = 85C
NEW PRODUCT
10
100
1
TA = 25C
10
0.1
0.01 0
5 10 15 20 25 30 35 40 VR, INSTANTANEOUS REVERSE VOLTAGE (V) Fig. 12 Typical Reverse Characteristics
1 0.1
1 10 100 VR, DC REVERSE VOLTAGE (V) Fig. 13 Total Capacitance vs. Reverse Voltage
1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 25
Note 2
150 TA, DERATED AMBIENT TEMPERATURE (C) 125
IF(AV), AVERAGE FORWARD CURRENT (A)
100
75
50
25
0 50 75 100 125 150 TA, AMBIENT TEMPERATURE (C) Fig. 14 Forward Current Derating Curve 175 0 10 20 30 VR, DC REVERSE VOLTAGE (V) Fig. 15 Operating Temperature Derating 40
Ordering Information
Part Number DMS2120LFWB-7
Notes:
(Note 6) Case DFN3020B-8 Packaging 3000/Tape & Reel
6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
MF YM
Date Code Key Year Code Month Code MF = Product Type Marking Code YM = Date Code Marking Y = Year (ex: V = 2008) M = Month (ex: 9 = September) 2011 Y May 5 Jun 6 2012 Z Jul 7 Aug 8 2013 A Sep 9 2014 B Oct O Nov N 2015 C Dec D
2008 V Jan 1 Feb 2
2009 W Mar 3
2010 X Apr 4
SBR is a registered trademark of Diodes Incorporated. DMS2120LFWB
Document number: DS31667 Rev. 4 - 2
5 of 7 www.diodes.com
April 2009
(c) Diodes Incorporated
DMS2120LFWB Package Outline Dimensions
A A1 A3
NEW PRODUCT
D D4 D4
E Z L b
D2 E2 e
DFN3020B-8 Dim Min Max Typ A 0.77 0.83 0.80 A1 0 0.05 0.02 A3 0.15 b 0.25 0.35 0.30 D 2.95 3.075 3.00 D2 0.82 1.02 0.92 D4 1.01 1.21 1.11 e 0.65 E 1.95 2.075 2.00 E2 0.43 0.63 0.53 L 0.25 0.35 0.30 Z 0.375 All Dimensions in mm
Suggested Pad Layout
C X1 Y1 G b Y2 a
X2
Dimensions a b C G X1 X2 Y1 Y2
Value (in mm) 0.09 0.365 0.65 0.285 0.4 1.12 0.5 0.73
SBR is a registered trademark of Diodes Incorporated. DMS2120LFWB
Document number: DS31667 Rev. 4 - 2
6 of 7 www.diodes.com
April 2009
(c) Diodes Incorporated
DMS2120LFWB
IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
NEW PRODUCT
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SBR is a registered trademark of Diodes Incorporated. DMS2120LFWB
Document number: DS31667 Rev. 4 - 2
7 of 7 www.diodes.com
April 2009
(c) Diodes Incorporated

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